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Finisar Corporation
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2019-02-18 17:13:43.451994
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Con fidential and Proprietary © 2015 Finisar Corporation. All rights reserved Rev. A1 Page 1 Product Specification 50 G H z Photo detector XPD V 2 1 x0( R A ) PRODUCT FEATURES 50 GHz electrical 3 dB bandwidth Excellent flat response within 3 dB bandwidth Impressive pulse behavior Well matched 50 Unique on – chip integrated bias network APPLICATIONS Communication system at 40 Gb /s High – speed lightwave characterization Microwave photonics up to 60 GHz The XPDV21x 0( RA) platform exhibits an optimized frequency response in both, power and phase. It is ideally suited for OC – 768/STM – 256 long haul systems. The on – chip integrated bias network with an optimized RF design in particular, ensures an undisturbed frequency response from DC to the 3 dB cut – off frequency and saves costs for internal bias – tees. The module is especially designed for optimal RF performance; therefo re the pulse response reveals virtually no ringing. A further advantage of the waveguide structure is the unbeatable high – power behavior. The photodetector shows a linear response up to an optical input power of 10 dBm, resulting in a high output voltage s wing avoiding the need for electrical amplification. ORDERING INFORMATION x : 2 = s tandard PDL 5 = low PDL v v : blank = no R = – coupled R A = termination, AC – coupled Vy : F = V connector ® female (standard) M = V connector ® male zz : FP = FC/PC (standard) other connectors available upon request XPDV21x 0 vv – Vy – zz
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